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KDV176U PDF预览

KDV176U

更新时间: 2024-11-18 11:29:27
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
1页 349K
描述
USQ PACKAGE

KDV176U 技术参数

生命周期:Not Recommended包装说明:R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.77应用:ATTENUATOR
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:PIN DIODE频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 代码:R-PDSO-G4元件数量:2
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE表面贴装:YES
技术:POSITIVE-INTRINSIC-NEGATIVE端子形式:GULL WING
端子位置:DUALBase Number Matches:1

KDV176U 数据手册

  
SEMICONDUCTOR  
MARKING SPECIFICATION  
KDV176U  
USQ PACKAGE  
1. Marking method  
Laser Marking  
2. Marking  
1
3
2
P1  
No.  
Item  
Marking  
Description  
Device Mark  
hFE Grade  
P1  
-
KDV176U  
-
2006. 1st Week  
[0:1st Character, 1:2nd Character]  
* Lot No.  
Dot  
01  
Pin 1 Index  
Note) * Lot No. marking method  
1
(A)  
2
(B)  
3
(C)  
4
(D)  
5
(E)  
6
(F)  
7
(G)  
8
(H)  
9
(I)  
0
(J)  
1 st Character  
Character  
arrangement  
A
(1)  
B
(2)  
C
(3)  
D
(4)  
E
(5)  
F
(6)  
G
(7)  
H
(8)  
I
(9)  
J
(0)  
2nd Character  
Year  
Marking (Week)  
Periode (Year)  
Remark  
1 st Year (2006)  
2 nd Year (2007)  
3 rd Year (2008)  
4 th Year (2009)  
01  
0A  
J1  
02  
51  
52  
5B  
E2  
EB  
2006-2010-2014...  
2007-2011-2015...  
2008-2012-2016...  
2009-2013-2017...  
0B  
J2  
5A  
E1  
Rotation for 4 years  
JA  
JB  
EA  
2008. 9. 8  
Revision No : 1  
1/1  

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