Datasheet > KDV245

KDV245

更新时间： 2024-11-17 22:32:23

品牌	Logo	应用领域
KEC		二极管变容二极管局域网
页数	文件大小	规格书
2页	388K
描述
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)

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数据手册

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KDV245 数据手册

KDV245

SEMICONDUCTOR

VARIABLE CAPACITANCE DIODE

SILICON EPITAXIAL PLANAR DIODE

TECHNICAL DATA

VCO FOR UHF Band Radio.

FEATURES

High Capacitance Ratio : C_0.5V/C_2.5V=2.5(Typ.)

Low Series Resistance : r_s=0.35 (Typ.)

Useful for Small Size Tuner.

DIM MILLIMETERS

2.50+0.1

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

1.25+0.05

0.90 0.05

SYMBOL

RATING

UNIT

0.30+0.06/-0.04

1.70 0.05

V_R

T_j

Reverse Voltage

MIN 0.17

0.126 0.03

Junction Temperature

150

1. ANODE

2. CATHODE

0~0.1

1.0 MAX

T_stg

Storage Temperature Range

-55 150

0.15+0.05

0.4+0.05

+4/-2

4~6

USC

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Reverse Voltage

SYMBOL

V_R

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

I_R=1 A

V_R=10V

I_R

C_0.5V

C_2.5V

Reverse Current

V_R=0.5V, f=1MHz

V_R=2.5V, f=1MHz

C_0.5V/C_2.5V, f=1MHz

V_R=1V, f=470MHz

7.3

2.75

2.4

8.4

3.4

Capacitance

Capacitance Ratio

Series Resistance

2.5

0.35

r_S

Marking

Type Name

E D

2003. 1. 27

Revision No : 0

1/2

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