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KDV175E PDF预览

KDV175E

更新时间: 2024-09-16 03:47:43
品牌 Logo 应用领域
KEC 二极管
页数 文件大小 规格书
2页 285K
描述
SILICON EPITAXIAL PIN TYPE DIODE

KDV175E 数据手册

 浏览型号KDV175E的Datasheet PDF文件第2页 
SEMICONDUCTOR  
KDV175E  
SILICON EPITAXIAL PIN TYPE DIODE  
TECHNICAL DATA  
VHFUHF BAND RF ATTENUATOR APPLICATIONS.  
AGC FOR AM/FM TUNER.  
C
E
FEATURES  
1
·Low Capacitance : CT=0.25[pF] (Typ.)  
·Low Series resistance : rS=7[] (Typ.).  
·Designed for low Inter Modulation.  
·Small Package : ESC.  
2
D
F
DIM MILLIMETERS  
_
A
B
C
D
E
F
1.60+0.10  
MAXIMUM RATING (Ta=25)  
_
1.20+0.10  
_
CHARACTERISTIC  
Reverse Voltage  
SYMBOL RATING  
UNIT  
V
0.80+0.10  
_
0.30+0.05  
_
+
VR  
IF  
0.60 0.10  
50  
50  
_
1. ANODE  
2. CATHODE  
+
0.13 0.05  
Forward Current  
mA  
Tj  
Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55150  
ESC  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Reverse Voltage  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
V
VR  
IR  
IR=10μA  
50  
-
-
-
0.1  
-
VR=50V  
Reverse Current  
Forward Voltage  
Total Capacitance  
Series Resistance  
-
μA  
V
VF  
CT  
rs  
VF=50mA  
-
0.95  
0.25  
7.0  
VR=50V, f=1MHz  
IF=10mA, f=100MHz  
-
-
pF  
-
-
Marking  
Type Name  
U E  
2002. 6. 14  
Revision No : 1  
1/2  

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