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KDV1484E PDF预览

KDV1484E

更新时间: 2024-11-18 03:30:55
品牌 Logo 应用领域
KEC 二极管变容二极管局域网
页数 文件大小 规格书
2页 385K
描述
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING

KDV1484E 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N二极管类型:VARIABLE CAPACITANCE DIODE
Base Number Matches:1

KDV1484E 数据手册

 浏览型号KDV1484E的Datasheet PDF文件第2页 
KDV1484E  
SEMICONDUCTOR  
VARIABLE CAPACITANCE DIODE  
SILICON EPITAXIAL PLANAR DIODE  
TECHNICAL DATA  
AUDIO SIGNAL TUNING.  
FEATURES  
C
E
High Capacitance Ratio  
Low Series Resistance  
Small Package : ESC  
1
2
D
F
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
DIM MILLIMETERS  
_
A
B
C
D
E
F
1.60+0.10  
SYMBOL  
RATING  
15  
UNIT  
V
_
1.20+0.10  
_
0.80+0.10  
VR  
Tj  
Reverse Voltage  
_
0.30+0.05  
_
+
0.60 0.10  
Junction Temperature  
150  
_
+
0.13 0.05  
1. ANODE  
2. CATHODE  
Tstg  
Storage Temperature Range  
-55 150  
ESC  
Marking  
Type Name  
V 1  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Reverse Current  
SYMBOL  
IR  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
nA  
VR=15V  
-
14.15  
6.26  
-
-
-
10  
15.75  
8.20  
-
C2V  
VR=2V, f=1MHz  
VR=6V, f=1MHz  
VR=8V, f=1MHz  
C6V  
Capacitance  
-
pF  
-
C8V  
5.4  
-
C2V/C6V  
C2V/C8V  
rS  
-
-
1.9  
2.5  
-
-
Capacitance Ratio  
Series Resistance  
-
-
VR=5V, f=470MHz  
-
0.57  
Note : Available in matched group for capacitance to 2.0%.  
C(Max.)-C(Min.)  
8V  
C(Min.)  
(VR=2V~8V)  
2006. 10. 11  
Revision No : 0  
1/2  

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