5秒后页面跳转
K7D161888M-HC25 PDF预览

K7D161888M-HC25

更新时间: 2024-09-17 19:55:43
品牌 Logo 应用领域
三星 - SAMSUNG 时钟双倍数据速率静态存储器内存集成电路
页数 文件大小 规格书
14页 365K
描述
DDR SRAM, 1MX18, 0.1ns, CMOS, PBGA153, 14 X 22 MM, FCBGA-153

K7D161888M-HC25 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:BGA, BGA153,9X17,50
针数:153Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:0.1 ns
其他特性:PIPELINED ARCHITECTURE最大时钟频率 (fCLK):250 MHz
I/O 类型:COMMONJESD-30 代码:R-PBGA-B153
JESD-609代码:e0长度:22 mm
内存密度:18874368 bit内存集成电路类型:DDR SRAM
内存宽度:18功能数量:1
端子数量:153字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA153,9X17,50封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.5,1.8 V
认证状态:Not Qualified座面最大高度:2.55 mm
最大待机电流:0.15 A最小待机电流:1.7 V
子类别:SRAMs最大压摆率:0.55 mA
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:14 mm
Base Number Matches:1

K7D161888M-HC25 数据手册

 浏览型号K7D161888M-HC25的Datasheet PDF文件第2页浏览型号K7D161888M-HC25的Datasheet PDF文件第3页浏览型号K7D161888M-HC25的Datasheet PDF文件第4页浏览型号K7D161888M-HC25的Datasheet PDF文件第5页浏览型号K7D161888M-HC25的Datasheet PDF文件第6页浏览型号K7D161888M-HC25的Datasheet PDF文件第7页 
K7D163688M  
K7D161888M  
512Kx36 & 1Mx18 SRAM  
Document Title  
16M DDR SYNCHRONOUS SRAM  
Revision History  
RevNo.  
History  
DraftData  
Remark  
Rev. 0.0  
Initial document.  
October. 2000  
Advance  
Rev. 0.1  
Rev. 0.2  
Rev. 1.0  
Add-HC37 part(Part Number, Idd, AC Characteristics)  
Timing Waveform Information Changed  
April. 2001  
May. 2001  
Sep. 2001  
Advance  
Advance  
Final  
Package thermal characteristics add.  
Final specification release.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Rev 1.0  
- 1 -  
Sep. 2001  

与K7D161888M-HC25相关器件

型号 品牌 获取价格 描述 数据表
K7D161888M-HC250 SAMSUNG

获取价格

DDR SRAM, 1MX18, CMOS, PBGA153, 14 X 22 MM, BGA-153
K7D161888M-HC300 SAMSUNG

获取价格

DDR SRAM, 1MX18, CMOS, PBGA153, 14 X 22 MM, BGA-153
K7D161888M-HC330 SAMSUNG

获取价格

DDR SRAM, 1MX18, CMOS, PBGA153, 14 X 22 MM, BGA-153
K7D161888M-HC370 SAMSUNG

获取价格

DDR SRAM, 1MX18, CMOS, PBGA153, 14 X 22 MM, BGA-153
K7D163671B-HC30 SAMSUNG

获取价格

Standard SRAM, 512KX36, 1.9ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
K7D163671B-HC300 SAMSUNG

获取价格

DDR SRAM, 512KX36, 0.2ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
K7D163671B-HC30T SAMSUNG

获取价格

Application Specific SRAM, 512KX36, 1.9ns, CMOS, PBGA153
K7D163671B-HC33 SAMSUNG

获取价格

Standard SRAM, 512KX36, 1.7ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
K7D163671B-HC33T SAMSUNG

获取价格

Application Specific SRAM, 512KX36, 1.7ns, CMOS, PBGA153
K7D163671B-HC37 SAMSUNG

获取价格

Standard SRAM, 512KX36, 1.7ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153