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K7D163674B-HC33T PDF预览

K7D163674B-HC33T

更新时间: 2024-11-08 06:04:15
品牌 Logo 应用领域
三星 - SAMSUNG 双倍数据速率静态存储器
页数 文件大小 规格书
16页 433K
描述
DDR SRAM, 512KX36, 0.2ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153

K7D163674B-HC33T 数据手册

 浏览型号K7D163674B-HC33T的Datasheet PDF文件第2页浏览型号K7D163674B-HC33T的Datasheet PDF文件第3页浏览型号K7D163674B-HC33T的Datasheet PDF文件第4页浏览型号K7D163674B-HC33T的Datasheet PDF文件第5页浏览型号K7D163674B-HC33T的Datasheet PDF文件第6页浏览型号K7D163674B-HC33T的Datasheet PDF文件第7页 
K7D163674B  
K7D161874B  
512Kx36 & 1Mx18 SRAM  
Document Title  
16M DDR SYNCHRONOUS SRAM  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 0.1  
History  
DraftData  
Oct. 2003  
Nov. 2003  
Remark  
Advance  
Preliminary  
Initial document.  
Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS  
-to support 1.8~2.5V VDD, change some items.  
Rev. 0.2  
Rev. 0.3  
Rev. 1.0  
Change DC CHARACTERISTICS (Stop Clock Standby Current)  
-ISB1 : 100 -> 150  
Feb. 2004  
Feb. 2004  
Mar. 2004  
Preliminary  
Preliminary  
Final  
Change JTAG Instruction Cording  
- For Reserved  
Change DC CHARACTERISTICS (Increase Operating Current)  
- x36 : add 40mA, x18 : add 60mA  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Rev 1.0  
Mar. 2004  
- 1 -  

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