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K7D321874A-HC37 PDF预览

K7D321874A-HC37

更新时间: 2024-09-17 11:27:43
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器双倍数据速率
页数 文件大小 规格书
19页 485K
描述
32Mb A-die DDR SRAM Specification

K7D321874A-HC37 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:BGA, BGA153,9X17,50
Reach Compliance Code:unknown风险等级:5.92
最长访问时间:2 ns最大时钟频率 (fCLK):375 MHz
I/O 类型:COMMONJESD-30 代码:R-PBGA-B153
内存密度:37748736 bit内存集成电路类型:STANDARD SRAM
内存宽度:18湿度敏感等级:1
端子数量:153字数:2097152 words
字数代码:2000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA153,9X17,50封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:1.5,2.5 V
认证状态:Not Qualified最大待机电流:0.3 A
最小待机电流:1.7 V子类别:SRAMs
最大压摆率:0.89 mA表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

K7D321874A-HC37 数据手册

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K7D323674A  
K7D321874A  
1Mx36 & 2Mx18 SRAM  
32Mb A-die DDR SRAM Specification  
153FCBGA with Pb & Pb-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.  
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-  
lar applications where Product failure could result in loss of life or personal or physical harm, or any military  
or defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev 1.4  
Oct. 2005  
- 1 -  

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