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K7D323674A-GC330 PDF预览

K7D323674A-GC330

更新时间: 2024-11-07 15:36:07
品牌 Logo 应用领域
三星 - SAMSUNG 双倍数据速率静态存储器内存集成电路
页数 文件大小 规格书
18页 468K
描述
DDR SRAM, 1MX36, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA-153

K7D323674A-GC330 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:BGA,
针数:153Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.84JESD-30 代码:R-PBGA-B153
JESD-609代码:e1长度:22 mm
内存密度:37748736 bit内存集成电路类型:DDR SRAM
内存宽度:36湿度敏感等级:2
功能数量:1端子数量:153
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX36
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:2.21 mm
最大供电电压 (Vsup):2.6 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN SILVER COPPER端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:40宽度:14 mm
Base Number Matches:1

K7D323674A-GC330 数据手册

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Preliminary  
K7D323674C  
K7D321874C  
1Mx36 & 2Mx18 SRAM  
32Mb C-die DDR SRAM Specification  
153BGA with Pb & Pb-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.  
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-  
lar applications where Product failure could result in loss of life or personal or physical harm, or any military  
or defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev 0.0  
Nov. 2005  
- 1 -  

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