5秒后页面跳转
K7D163671B-HC33 PDF预览

K7D163671B-HC33

更新时间: 2024-09-17 19:45:31
品牌 Logo 应用领域
三星 - SAMSUNG 时钟静态存储器内存集成电路
页数 文件大小 规格书
16页 259K
描述
Standard SRAM, 512KX36, 1.7ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153

K7D163671B-HC33 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:HBGA, BGA153,9X17,50
Reach Compliance Code:unknown风险等级:5.92
最长访问时间:1.7 ns其他特性:PIPELINED ARCHITECTURE
最大时钟频率 (fCLK):333 MHzI/O 类型:COMMON
JESD-30 代码:R-PBGA-B153JESD-609代码:e0
长度:22 mm内存密度:18874368 bit
内存集成电路类型:STANDARD SRAM内存宽度:36
湿度敏感等级:3功能数量:1
端子数量:153字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:HBGA
封装等效代码:BGA153,9X17,50封装形状:RECTANGULAR
封装形式:GRID ARRAY, HEAT SINK/SLUG并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:1.5,2.5 V
认证状态:Not Qualified座面最大高度:2.21 mm
最小待机电流:2.37 V子类别:SRAMs
最大压摆率:0.45 mA最大供电电压 (Vsup):2.63 V
最小供电电压 (Vsup):2.37 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
宽度:14 mmBase Number Matches:1

K7D163671B-HC33 数据手册

 浏览型号K7D163671B-HC33的Datasheet PDF文件第2页浏览型号K7D163671B-HC33的Datasheet PDF文件第3页浏览型号K7D163671B-HC33的Datasheet PDF文件第4页浏览型号K7D163671B-HC33的Datasheet PDF文件第5页浏览型号K7D163671B-HC33的Datasheet PDF文件第6页浏览型号K7D163671B-HC33的Datasheet PDF文件第7页 
Advance  
512Kx36 & 1Mx18 SRAM  
K7D163671B  
K7D161871B  
Document Title  
16M DDR SYNCHRONOUS SRAM  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 0.1  
History  
DraftData  
Feb. 2003  
Sep. 2003  
Remark  
Advance  
Advance  
Initial document.  
Change AC CHARACTERISTICS  
-Remove Bin-40  
-Data Setup time -33 : 0.25 -> 0.3  
-Data Hold time -33 : 0.25 -> 0.3  
-Remove : tQTRK, tCXCV  
-Add : tCXCH,tCXCL,tCHQV,tCLQV,tCHQX,tCLQX,tCLQZ,tCHLZ  
Change RECOMMENDED DC OPERATING CONDITIONS  
-Input Reference Voltage (Max) : 1.0 -> 0.95  
Change DC CHARACTERISTICS  
- Fill up the blank(TBD)  
- Change ISB1 : 150 -> 100  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Rev 0.1  
- 1 -  
Sep. 2003  

与K7D163671B-HC33相关器件

型号 品牌 获取价格 描述 数据表
K7D163671B-HC33T SAMSUNG

获取价格

Application Specific SRAM, 512KX36, 1.7ns, CMOS, PBGA153
K7D163671B-HC37 SAMSUNG

获取价格

Standard SRAM, 512KX36, 1.7ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
K7D163671B-HC370 SAMSUNG

获取价格

DDR SRAM, 512KX36, 0.2ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
K7D163671B-HC37T SAMSUNG

获取价格

Application Specific SRAM, 512KX36, 1.7ns, CMOS, PBGA153
K7D163671B-HC40 SAMSUNG

获取价格

Standard SRAM, 512KX36, CMOS, PBGA153
K7D163671M-HC33 SAMSUNG

获取价格

DDR SRAM, 512KX36, 1.7ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-153
K7D163671M-HC37 SAMSUNG

获取价格

DDR SRAM, 512KX36, 1.7ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-153
K7D163671M-HC40 SAMSUNG

获取价格

DDR SRAM, 512KX36, 1.6ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-153
K7D163674B SAMSUNG

获取价格

512Kx36 & 1Mx18 SRAM
K7D163674B-HC27 SAMSUNG

获取价格

512Kx36 & 1Mx18 SRAM