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K7D161888B-HC30 PDF预览

K7D161888B-HC30

更新时间: 2024-09-18 03:33:55
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
16页 255K
描述
Standard SRAM, 1MX18, 1.9ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153

K7D161888B-HC30 数据手册

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Advance  
K7D161888B  
1Mx18 SRAM  
Document Title  
16M DDR SYNCHRONOUS SRAM  
Revision History  
RevNo.  
History  
DraftData  
Remark  
Rev. 0.0  
Initial document.  
Feb. 2003  
Jun. 2003  
Sep. 2003  
Advance  
Rev. 0.1  
Rev. 0.2  
Remove K7D163688B  
Advance  
Advance  
Change AC CHARACTERISTICS  
-Data Setup time -33 : 0.25 -> 0.3  
-Data Hold time -33 : 0.25 -> 0.3  
-Remove : tQTRK, tCXCV  
-Add : tCXCH,tCXCL,tCHQV,tCLQV,tCHQX,tCLQX,tCLQZ,tCHLZ  
Change RECOMMENDED DC OPERATING CONDITIONS  
-Input Reference Voltage (Max) : 1.0 -> 0.95  
Change DC CHARACTERISTICS  
- Fill up the blank(TBD)  
- Change ISB1 : 150 -> 100  
Rev. 0.3  
Change PACKAGE PIN CONFIGURATIONS  
- Remove the number at DQ pins  
Oct. 2003  
Advance  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Rev 0.3  
- 1 -  
Oct. 2003  

与K7D161888B-HC30相关器件

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K7D161888B-HC33 SAMSUNG

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Standard SRAM, 1MX18, 1.8ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
K7D161888B-HC37 SAMSUNG

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Standard SRAM, 1MX18, 1.7ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
K7D161888M-HC25 SAMSUNG

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DDR SRAM, 1MX18, 0.1ns, CMOS, PBGA153, 14 X 22 MM, FCBGA-153
K7D161888M-HC250 SAMSUNG

获取价格

DDR SRAM, 1MX18, CMOS, PBGA153, 14 X 22 MM, BGA-153
K7D161888M-HC300 SAMSUNG

获取价格

DDR SRAM, 1MX18, CMOS, PBGA153, 14 X 22 MM, BGA-153
K7D161888M-HC330 SAMSUNG

获取价格

DDR SRAM, 1MX18, CMOS, PBGA153, 14 X 22 MM, BGA-153
K7D161888M-HC370 SAMSUNG

获取价格

DDR SRAM, 1MX18, CMOS, PBGA153, 14 X 22 MM, BGA-153
K7D163671B-HC30 SAMSUNG

获取价格

Standard SRAM, 512KX36, 1.9ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
K7D163671B-HC300 SAMSUNG

获取价格

DDR SRAM, 512KX36, 0.2ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
K7D163671B-HC30T SAMSUNG

获取价格

Application Specific SRAM, 512KX36, 1.9ns, CMOS, PBGA153