Datasheet > JMTI210P02A

JMTI210P02A

更新时间： 2024-11-24 14:53:55

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	395K
描述
低压 P-ch (-30V ~ -5V)

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中文翻译

获取价格

数据手册

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JMTI210P02A 数据手册

JMTI210P02A

Description

JMT P-channel Enhancement Mode Power MOSFET

Features

Application

 -20V, -20A

 Load Switch

R_DS(ON)<16mΩ @ V_GS=-4.5V

 PWM Application

R_DS(ON)<24mΩ @ V_GS=-2.5V

 Power management

 Advanced Trench Technology

 Provide Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

100% UIS TESTED!

100% ΔVds TESTED!

TO-251-3L top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

TUBE

(PCS)

Inner Box

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE Device Package

TUBE TO-251-3L

JMTI210P02A

4,950

29,700

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

-20

±12

-20

-13

-80

Gate-Source Voltage

T_C= 25℃

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

Single Pulsed Avalanche Energy ^note2

T_C= 100℃

I_DM

EAS

P_D

Power Dissipation

T_C= 25℃

R_θJC

Thermal Resistance, Junction to Ambient

℃/W

℃

T_J, T_STGOperating and Storage Temperature Range

-55 to +175

JieJie Microelectronics CO. , Ltd

Version : 1.0

- 1 -

12 3 4 5 6

中文翻译

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