Datasheet > JMTJ210P02A

JMTJ210P02A

更新时间： 2023-12-06 20:09:32

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	460K
描述
低压 P-ch (-30V ~ -5V)

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JMTJ210P02A 数据手册

JMTJ210P02A

Description

JMT P-channel Enhancement Mode Power MosFET

Features

Applications

 Load Switch

 -20V, -7A

 PWM Application

 Power Management

_DS(ON)< 18.7mΩ @ V_GS= -4.5V

R_DS(ON)< 24.4mΩ @ V_GS= -2.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead Free

SOT-23-3L Top View

Schematic Diagram

Marking and Pin Assignment

Package Marking and Ordering Information

Per Carton

Device Marking

Device

Package

Outline

Reel Size Reel(pcs)

7" 3000

(pcs)

2021

JMTJ210P02A

SOT-23-3L

TAPING

120000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

-20

±12

-7

T_A= 25°C

I_D

Continuous Drain Current

T_A= 100°C

-4.4

-28

1.3

Pulsed Drain Current ⁽¹⁾

Power Dissipation

I_DM

P_D

T_A= 25°C

Thermal Resistance, Junction to Ambient⁽³⁾

R_θJA

°C/W

°C

T_J, T_STG

Junction & Storage Temperature Range

-55 to 150

JieJie Microelectronics Co., Ltd

Version：1.4

12 3 4 5 6

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