JMTK060N06A
Description
JMT N-channel Enhancement Mode Power MOSFET
Features
Application
60V, 120A
Load Switch
RDS(ON) <5.9mΩ @ VGS = 10V
PWM Application
Power management
Advanced Trench Technology
Provide Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired
100% UIS TESTED!
100% ΔVds TESTED!
TO-252-4R top view
Marking and pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Reel
Size
Reel
(PCS)
Per Carton
(PCS)
Device Marking
Device
OUTLINE
Device Package
JMTK060N06A
JMTK060N06A
TAPING
TO-252-4R
13inch
2500
25000
Absolute Maximum Ratings (TC=25℃ unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
VDSS
VGSS
60
±25
V
V
Gate-Source Voltage
TC = 25℃
120
A
ID
Continuous Drain Current
Pulsed Drain Current note1
TC = 100℃
78
A
IDM
EAS
PD
480
A
Single Pulsed Avalanche Energy note2
225
mJ
W
Power Dissipation
TC = 25℃
181
RθJC
Thermal Resistance, Junction to Case
0.83
℃/W
℃
TJ, TSTG Operating and Storage Temperature Range
-55 to +175
JieJie Microelectronics CO. , Ltd
Version :1.0
- 1 -