Datasheet > JMTK060P03A

JMTK060P03A

更新时间： 2024-11-27 14:55:15

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
7页	392K
描述
低压 P-ch (-30V ~ -5V)

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中文翻译

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数据手册

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JMTK060P03A 数据手册

JMTK060P03A

Description

JMT P-channel Enhancement Mode Power MOSFET

Features

Application

 V_DS= -30V, I_D= -90A

 PWM Applications

 Load Switch

R_DS(ON)<6.4mΩ @ V_GS= -10V

R_DS(ON)<10.5mΩ @ V_GS= -4.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

 Power Management

100% UIS TESTED!

100% ΔVds TESTED!

TO-252-4R(DPAK) top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

Reel Size

JMTK060P03A

TAPING

TO-252-4R

13inch

2500

25000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

-30

±20

Gate-Source Voltage

T_C= 25℃

-90

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_C= 100℃

-59

I_DM

E_AS

P_D

-360

210

Single Pulsed Avalanche Energy ^note2

Power Dissipation

T_C= 25℃

109

R_θJC

Thermal Resistance, Junction to Case

1.4

℃/W

℃

T_J, T_STGOperating and Storage Temperature Range

-55 to +175

JieJie Microelectronics CO. , Ltd

Version :1.1

- 1 -

12 3 4 5 6 7

中文翻译

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