Datasheet > JMTJ100N02A

JMTJ100N02A

更新时间： 2024-11-24 14:55:55

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	332K
描述
低压 N-ch (≤ 30V )

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中文翻译

获取价格

数据手册

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JMTJ100N02A 数据手册

JMTJ100N02A

Description

JMT N-channel Enhancement Mode Power MOSFET

Features

Application

 20V, 8A

 Load Switch

R_DS(ON)< 14mΩ @ V_GS=4.5V

 PWM Application

R_DS(ON)< 22.5mΩ @ V_GS=2.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

 Power management

SOT-23-3L top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(PCS)

Per Carton

Device Marking

Device

OUTLINE

Device Package

Reel Size

(PCS)

2010

JMTJ100N02A

TAPING

SOT-23-3L

7inch

3000

120000

Absolute Maximum Ratings (T_A=25℃ unless otherwise specified)

Symbol

V_DSS

Parameter

Max.

Units

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±12

T_A= 25℃

I_D

Continuous Drain Current

T_A= 100℃

Pulsed Drain Current ^note1

Power Dissipation

I_DM

P_D

T_A= 25℃

1.5

℃/W

℃

Thermal Resistance, Junction to Case

R_θJA

83.3

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

JieJie Microelectronics CO. , Ltd

Version :1.1

- 1 -

12 3 4 5 6

中文翻译

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