JMTK100P03A
Description
JMT P-channel Enhancement Mode Power MOSFET
Features
Application
VDS= -30V, ID= -55A
PWM Applications
Load Switch
Power Management
RDS(ON) <10mΩ @ VGS = -10V
RDS(ON) <16mΩ @ VGS = -4.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired
100% UIS TESTED!
100% ΔVds TESTED!
TO-252-4R(DPAK) top view
Marking and pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Reel
(PCS)
Per Carton
(PCS)
Device Marking
Device
OUTLINE
Device Package
Reel Size
JMTK100P03A
JMTK100P03A
TAPING
TO-252-4R
13inch
2500
25000
Absolute Maximum Ratings (TC=25℃ unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
VDSS
VGSS
-30
±20
V
V
Gate-Source Voltage
TC = 25℃
-55
A
ID
Continuous Drain Current
Pulsed Drain Current note1
TC = 100℃
-26
A
IDM
EAS
PD
-220
121
A
Single Pulsed Avalanche Energy note2
mJ
W
Power Dissipation
TC = 25℃
52
RθJC
Thermal Resistance, Junction to Case
2.9
℃/W
℃
TJ, TSTG Operating and Storage Temperature Range
-55 to +175
JieJie Microelectronics CO. , Ltd
Version :1.1
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