JMTK035N04L
Description
JMT N-channel Enhancement Mode Power MOSFET
Features
Application
40V,150A
Load Switch
RDS(ON)<3.8mΩ @ VGS = 10V
PWM Application
Power management
RDS(ON)<5.5mΩ @ VGS = 4.5V
Lead free and Green Device Available
Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired
100% UIS TESTED!
100% ΔVds TESTED!
TO-252-4R(DPAK) top view
Marking and pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Reel
(PCS)
Per Carton
(PCS)
Device Marking
Device
OUTLINE
Device Package
TO-252-4R
Reel Size
JMTK035N04L
JMTK035N04L
TAPING
13inch
2500
25000
Absolute Maximum Ratings (TC=25℃ unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
VDSS
VGSS
40
±20
V
V
Gate-Source Voltage
TC = 25℃
150
A
ID
Continuous Drain Current
TC = 100℃
98
A
Pulsed Drain Current note1
Single Pulsed Avalanche Energy note2
Power Dissipation
IDM
EAS
600
A
196
mJ
W
PD
TC = 25℃
162
Thermal Resistance, Junction to Case
RθJC
0.9
℃/W
℃
TJ, TSTG Operating and Storage Temperature Range
-55 to +175
JieJie Microelectronics CO. , Ltd
Version :1.0
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