JMTJ3401B
Description
JMT P-channel Enhancement Mode Power MosFET
Features
Applications
Load Switch
-30V, -4A
PWM Application
RDS(ON) < 64mΩ @ VGS = -10V
RDS(ON) < 74mΩ @ VGS = -4.5V
RDS(ON) < 96mΩ @ VGS = -2.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
Lead Free
Power Management
D
S
G
SOT-23-3L Top View
Schematic Diagram
Marking and Pin Assignment
Package Marking and Ordering Information
Per Carton
Device Marking
Device
Package
Outline
Reel Size Reel(pcs)
7" 3000
(pcs)
3401B
JMTJ3401B
SOT-23-3L
TAPING
120000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
-30
±12
-4
V
V
TA = 25°C
ID
Continuous Drain Current
A
TA = 100°C
-3
Pulsed Drain Current (1)
IDM
PD
-16
1.1
110
A
W
Power Dissipation
TA = 25°C
Thermal Resistance, Junction to Ambient(2)
Junction & Storage Temperature Range
RθJA
°C/W
°C
TJ, TSTG
-55 to 150
JieJie Microelectronics Co., Ltd
1
Version:1.0