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JMTJ3401B PDF预览

JMTJ3401B

更新时间: 2024-11-24 14:50:03
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 591K
描述
低压 P-ch (-30V ~ -5V)

JMTJ3401B 数据手册

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JMTJ3401B  
Description  
JMT P-channel Enhancement Mode Power MosFET  
Features  
Applications  
Load Switch  
-30V, -4A  
PWM Application  
RDS(ON) < 64mΩ @ VGS = -10V  
RDS(ON) < 74mΩ @ VGS = -4.5V  
RDS(ON) < 96mΩ @ VGS = -2.5V  
Advanced Trench Technology  
Excellent RDS(ON) and Low Gate Charge  
Lead Free  
Power Management  
D
S
G
SOT-23-3L Top View  
Schematic Diagram  
Marking and Pin Assignment  
Package Marking and Ordering Information  
Per Carton  
Device Marking  
Device  
Package  
Outline  
Reel Size Reel(pcs)  
7" 3000  
(pcs)  
3401B  
JMTJ3401B  
SOT-23-3L  
TAPING  
120000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
-30  
±12  
-4  
V
V
TA = 25°C  
ID  
Continuous Drain Current  
A
TA = 100°C  
-3  
Pulsed Drain Current (1)  
IDM  
PD  
-16  
1.1  
110  
A
W
Power Dissipation  
TA = 25°C  
Thermal Resistance, Junction to Ambient(2)  
Junction & Storage Temperature Range  
RθJA  
°C/W  
°C  
TJ, TSTG  
-55 to 150  
JieJie Microelectronics Co., Ltd  
1
Version1.0  

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