JMTJ2302C
Description
JMT N-channel Enhancement Mode Power MOSFET
Features
Applications
Load Switch
20V, 4A
PWM Application
Power Management
RDS(ON) < 29mΩ @ VGS = 4.5V
RDS(ON) < 35mΩ @ VGS = 2.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
Lead Free
D
G
S
Schematic
30
Marking and Pin
SOT-23-3L Top View
Package Marking and Ordering Information
Per Carton
(pcs)
Device Marking
Device
Package
Outline
Reel Size
Reel(pcs)
2302C
JMTJ2302C
SOT-23-3L
TAPING
7"
3000
120000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
20
±12
4
V
V
TA = 25°C
ID
Continuous Drain Current
A
TA = 100°C
3
Pulsed Drain Current (1)
Power Dissipation
IDM
PD
16
1.2
104
A
W
TA = 25°C
Thermal Resistance, Junction to Ambient(2)
Junction & Storage Temperature Range
RθJA
°C/W
°C
TJ, TSTG
-55 to 150
JieJie Microelectronics Co., Ltd
1
Version:1.2