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JMTJ2302C PDF预览

JMTJ2302C

更新时间: 2023-12-06 20:11:16
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 986K
描述
低压 N-ch (≤ 30V )

JMTJ2302C 数据手册

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JMTJ2302C  
Description  
JMT N-channel Enhancement Mode Power MOSFET  
Features  
Applications  
Load Switch  
20V, 4A  
PWM Application  
Power Management  
RDS(ON) < 29mΩ @ VGS = 4.5V  
RDS(ON) < 35mΩ @ VGS = 2.5V  
Advanced Trench Technology  
Excellent RDS(ON) and Low Gate Charge  
Lead Free  
D
G
S
Schematic  
Marking and Pin  
SOT-23-3L Top View  
Package Marking and Ordering Information  
Per Carton  
(pcs)  
Device Marking  
Device  
Package  
Outline  
Reel Size  
Reel(pcs)  
2302C  
JMTJ2302C  
SOT-23-3L  
TAPING  
7"  
3000  
120000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
20  
±12  
4
V
V
TA = 25°C  
ID  
Continuous Drain Current  
A
TA = 100°C  
3
Pulsed Drain Current (1)  
Power Dissipation  
IDM  
PD  
16  
1.2  
104  
A
W
TA = 25°C  
Thermal Resistance, Junction to Ambient(2)  
Junction & Storage Temperature Range  
RθJA  
°C/W  
°C  
TJ, TSTG  
-55 to 150  
JieJie Microelectronics Co., Ltd  
1
Version1.2  

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