Datasheet > JMTI50N06B

JMTI50N06B

更新时间： 2024-11-24 14:55:51

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	513K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

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数据手册

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JMTI50N06B 数据手册

JMTI50N06B

Description

JMT N-channel Enhancement Mode Power MOSFET

Features

Application

 60V,50A

 Load Switch

R_DS(ON)<17mΩ @ V_GS= 10V

 PWM Application

 Power management

R_DS(ON)<25mΩ @ V_GS= 4.5V

 Advanced Trench Technology

 Provide Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

100% UIS TESTED!

100% ΔVds TESTED!

TO-251S top view

Device Marking

Marking and pin Assignment

Schematic Diagram

TUBE

(PCS)

Inner Box

(PCS)

Per Carton

(PCS)

Device

JMTI50N06B

OUTLINE

Device Package

JMTI50N06B

TUBE

TO-251S

4,950

29,700

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

±20

Gate-Source Voltage

T_C= 25℃

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

Single Pulsed Avalanche Energy ^note2

T_C= 100℃

I_DM

EAS

P_D

200

Power Dissipation

T_C= 25℃

R_θJC

Thermal Resistance, Junction to Case

1.69

℃/W

℃

T_J, T_STGOperating and Storage Temperature Range

-55 to +175

JieJie Microelectronics CO. , Ltd

Version :1.0

- 1 -

12 3 4 5 6

中文翻译

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