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JMTK085P04A PDF预览

JMTK085P04A

更新时间: 2024-11-27 14:55:23
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 413K
描述
中压 P-ch (-100V ~ -40V)

JMTK085P04A 数据手册

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JMTK085P04A  
Description  
JMT P-channel Enhancement Mode Power MOSFET  
Features  
Application  
VDS= -40V, ID= -70A  
PWM Applications  
Load Switch  
RDS(ON) < 9.2mΩ @ VGS = -10V  
RDS(ON) < 13mΩ @ VGS = -4.5V  
Advanced Trench Technology  
Excellent RDS(ON) and Low Gate Charge  
Lead free product is acquired  
Power Management  
100% UIS TESTED!  
100% ΔVds TESTED!  
TO-252-3L(DPAK) top view  
Marking and pin Assignment  
Schematic Diagram  
Package Marking and Ordering Information  
Reel  
(PCS)  
Per Carton  
(PCS)  
Device Marking  
Device  
OUTLINE  
Device Package  
Reel Size  
JMTK085P04A  
JMTK085P04A  
TAPING  
TO-252-3L  
13inch  
2500  
25000  
Absolute Maximum Ratings (TC=25unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Max.  
Units  
VDSS  
VGSS  
-40  
±20  
V
V
Gate-Source Voltage  
TC = 25  
-70  
A
ID  
Continuous Drain Current  
TC = 100℃  
-46  
A
IDM  
EAS  
Pulsed Drain Current note1  
Single Pulsed Avalanche Energy note2  
Power Dissipation  
-280  
182  
A
mJ  
W
PD  
TC = 25℃  
90  
RθJC  
TJ, TSTG  
Thermal Resistance, Junction to Case  
1.7  
/W  
Operating and Storage Temperature Range  
-55 to +175  
JieJie Microelectronics CO. , Ltd  
Version : 1.1  
- 1 -  

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