Datasheet > JMTK080P03A

JMTK080P03A

更新时间： 2024-11-27 14:54:23

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	929K
描述
低压 P-ch (-30V ~ -5V)

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中文翻译

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数据手册

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JMTK080P03A 数据手册

JMTK080P03A

Description

JMT P-channel Enhancement Mode Power MosFET

Features

Applications

 Load Switch

 -30V, -60A

 PWM Application

 Power Management

_DS(ON)< 6.5mΩ @ V_GS= -10V

R_DS(ON)< 10mΩ @ V_GS= -4.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead Free

100% UIS TESTED!

100% ΔVds TESTED!

TO-252-3L(DPAK) Top View

Schematic Diagram

Marking and Pin Assignment

Package Marking and Ordering Information

Per Carton

Device Marking

Device

Package

Outline

Reel Size Reel(pcs)

13" 2500

(pcs)

JMTK080P03A

TO-252-3L

TAPING

25000

Absolute Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Value

Symbol

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

-30

±20

-60

-38

-240

156

T_C= 25°C

I_D

Continuous Drain Current

T_C= 100°C

Pulsed Drain Current ⁽¹⁾

Single Pulsed Avalanche Energy⁽²⁾

I_DM

E_AS

P_D

Power Dissipation

T_C= 25°C

Thermal Resistance, Junction to Ambient⁽³⁾

Thermal Resistance, Junction to Case

Junction & Storage Temperature Range

R_θJA

R_θJC

T_J, T_STG

°C/W

°C

1.6

-55 to 150

JieJie Microelectronics Co., Ltd

Version：1.3

12 3 4 5 6

中文翻译

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