Datasheet > JMTJ250P02A

JMTJ250P02A

更新时间： 2024-11-24 14:53:47

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	378K
描述
低压 P-ch (-30V ~ -5V)

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中文翻译

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数据手册

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JMTJ250P02A 数据手册

JMTJ250P02A

Description

JMT P-channel Enhancement Mode Power MOSFET

Features

Application

 -20V, -5A

 Load Switch

R_DS(ON)<26mΩ @ V_GS=-4.5V

 PWM Application

R_DS(ON)<37mΩ @ V_GS=-2.5V

 Power management

 Advanced Trench Technology

 Provide Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

SOT-23-3L top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(PCS)

Per Carton

Device Marking

Device

OUTLINE

Device Package

Reel Size

(PCS)

2025

JMTJ250P02A

TAPING

SOT-23-3L

7inch

3000

120000

Absolute Maximum Ratings (T_A=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

-20

±12

Gate-Source Voltage

T_A= 25℃

-5

I_D

Continuous Drain Current

T_A= 100℃

-3.25

-20

I_DM

P_D

Pulsed Drain Current ^note1

Power Dissipation

T_A= 25℃

1.1

℃/W

℃

R_θJA

Thermal Resistance, Junction to Ambient

114

T_J, T_STGOperating and Storage Temperature Range

-55 to +150

JieJie Microelectronics CO. , Ltd

Version : 1.1

- 1 -

12 3 4 5 6

中文翻译

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