JMTK3002B
Description
JMT N-channel Enhancement Mode Power MOSFET
Features
Applications
Load Switch
30V, 180A
PWM Application
RDS(ON) < 2.6mΩ @ VGS = 10V
RDS(ON) < 4.3mΩ @ VGS = 4.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
Lead Free
Power Management
100% UIS TESTED!
100% ΔVds TESTED!
D
S
G
TO-252-3L(DPAK) Top View
Marking and Pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Per Carton
Device Marking
Device
Package
Outline
Reel Size Reel(pcs)
13" 2500
(pcs)
JMTK3002B
JMTK3002B
TO-252-3L
TAPING
25000
Absolute Maximum Ratings (@ TC = 25°C unless otherwise specified)
Parameter
Value
Symbol
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
30
±20
180
114
720
289
60
V
V
TC = 25°C
ID
Continuous Drain Current
A
TC = 100°C
Pulsed Drain Current (1)
Single Pulsed Avalanche Energy(2)
IDM
EAS
A
mJ
W
PD
Power Dissipation
TC = 25°C
Thermal Resistance, Junction to Ambient(3)
Thermal Resistance, Junction to Case
Junction & Storage Temperature Range
RθJA
RθJC
TJ, TSTG
35
°C/W
°C
2.1
-55 to 150
JieJie Microelectronics Co., Ltd
1
Version:1.1