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JMTK3002B PDF预览

JMTK3002B

更新时间: 2023-12-06 20:10:51
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 982K
描述
低压 N-ch (≤ 30V )

JMTK3002B 数据手册

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JMTK3002B  
Description  
JMT N-channel Enhancement Mode Power MOSFET  
Features  
Applications  
Load Switch  
30V, 180A  
PWM Application  
RDS(ON) < 2.6mΩ @ VGS = 10V  
RDS(ON) < 4.3mΩ @ VGS = 4.5V  
Advanced Trench Technology  
Excellent RDS(ON) and Low Gate Charge  
Lead Free  
Power Management  
100% UIS TESTED!  
100% ΔVds TESTED!  
D
S
G
TO-252-3L(DPAK) Top View  
Marking and Pin Assignment  
Schematic Diagram  
Package Marking and Ordering Information  
Per Carton  
Device Marking  
Device  
Package  
Outline  
Reel Size Reel(pcs)  
13" 2500  
(pcs)  
JMTK3002B  
JMTK3002B  
TO-252-3L  
TAPING  
25000  
Absolute Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
30  
±20  
180  
114  
720  
289  
60  
V
V
TC = 25°C  
ID  
Continuous Drain Current  
A
TC = 100°C  
Pulsed Drain Current (1)  
Single Pulsed Avalanche Energy(2)  
IDM  
EAS  
A
mJ  
W
PD  
Power Dissipation  
TC = 25°C  
Thermal Resistance, Junction to Ambient(3)  
Thermal Resistance, Junction to Case  
Junction & Storage Temperature Range  
RθJA  
RθJC  
TJ, TSTG  
35  
°C/W  
°C  
2.1  
-55 to 150  
JieJie Microelectronics Co., Ltd  
1
Version1.1  

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