Datasheet > JMTK2006A

JMTK2006A

更新时间： 2023-12-06 20:02:54

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	1119K
描述
低压 N-ch (≤ 30V )

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JMTK2006A 数据手册

JMTK2006A

Description

JMT N-channel Enhancement Mode Power MOSFET

Features

Applications

 20V, 60A

 Load Switch

R_DS(ON)< 6.2mΩ @ V_GS= 4.5V

 PWM Application

R_DS(ON)< 8.5mΩ @ V_GS= 2.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead Free

 Power Management

100% UIS TESTED!

100% ΔVds TESTED!

TO-252-3L(DPAK) Top View

Schematic Diagram

Marking and Pin Assignment

Package Marking and Ordering Information

Per Carton

Device Marking

Device

Package

Outline

Reel Size Reel(pcs)

13" 2500

(pcs)

JMTK2006A

TO-252-3L

TAPING

25000

Absolute Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Value

Symbol

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

±12

T_C= 25°C

I_D

Continuous Drain Current

T_C= 100°C

Pulsed Drain Current ⁽¹⁾

Single Pulsed Avalanche Energy⁽²⁾

I_DM

E_AS

240

P_D

Power Dissipation

T_C= 25°C

Thermal Resistance, Junction to Ambient⁽³⁾

Thermal Resistance, Junction to Case

Junction & Storage Temperature Range

R_θJA

R_θJC

T_J, T_STG

°C/W

°C

3.4

-55 to 150

JieJie Microelectronics Co., Ltd

Version：1.2

12 3 4 5 6

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