Datasheet > JANTXV2N5302

JANTXV2N5302

更新时间： 2024-11-22 23:01:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管高功率电源
页数	文件大小	规格书
2页	62K
描述
NPN HIGH POWER SILICON TRANSISTOR

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数据手册

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JANTXV2N5302 数据手册

TECHNICAL DATA

NPN HIGH POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 456

Devices

Qualified Level

JANTX

JANTXV

2N5302

2N5303

MAXIMUM RATINGS

Ratings

Symbol 2N5302 2N5303 Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Vdc

Adc

V_CEO

V_CBO

V_EBO

I_C

5.0

7.5

Base Current

I_B

TO-3*

(TO-204AA)

Total Power Dissipation

@ T_A= +25⁰C⁽¹⁾

@ T_C= +100⁰C⁽²⁾

5.0

115

P_T

W/⁰C

Operating & Storage Junction Temperature Range

-65 to +200

⁰C

T_J_,T

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

⁰C/W

Thermal Resistance, Junction-to-Case

0.875

qJC

1) Derate linearly 28.57 mW/⁰C for T_A= +25⁰C

2) Derate linearly 1.14 W/⁰C for T_C= +100⁰C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

Symbol

Min.

Max.

Unit

Vdc

I_C= 200 mAdc, I_B= 0

2N5302

2N5303

V_(BR)

CEO

Collector-Emitter Cutoff Current

V_CE= 60 Vdc, I_B= 0

V_CE= 80 Vdc, I_B= 0

mAdc

2N5302

2N5303

I_CEO

Emitter-Base Cutoff Current

V_EB= 5.0 Vdc, I_C= 0

5.0

I_EBO

mAdc

Collector-Emitter Cutoff Current

V_BE= 1.5 Vdc, V_CE= 60 Vdc

V_BE= 1.5 Vdc, V_CE= 80 Vdc

Collector-Emitter Cutoff Current

V_CE= 60 Vdc

5.0

2N5302

2N5303

I_CEX

5.0

mAdc

2N5302

2N5303

I_CBO

V_CE= 80 Vdc

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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