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JANTXV2N5666U3 PDF预览

JANTXV2N5666U3

更新时间: 2024-11-23 12:03:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关晶体管
页数 文件大小 规格书
3页 118K
描述
NPN POWER SILICON SWITCHING TRANSISTOR

JANTXV2N5666U3 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.03Is Samacsys:N
最大集电极电流 (IC):5 A配置:Single
最小直流电流增益 (hFE):40JESD-609代码:e0
最高工作温度:200 °C极性/信道类型:NPN
最大功率耗散 (Abs):1.5 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

JANTXV2N5666U3 数据手册

 浏览型号JANTXV2N5666U3的Datasheet PDF文件第2页浏览型号JANTXV2N5666U3的Datasheet PDF文件第3页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN POWER SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/455  
DEVICES  
LEVELS  
2N5664  
2N5665  
2N5666  
2N5666S  
2N5666U3  
2N5667  
2N5667S  
JAN  
JANTX  
JANTV  
JANS  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
2N5664  
2N5666, S 2N5667, S  
2N5665  
Parameters / Test Conditions  
Symbol  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
VCEO  
VCBO  
VEBO  
IB  
200  
250  
300  
400  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
TO-66 (TO-213AA)  
2N5664, 2N5665  
6.0  
1.0  
5.0  
Collector Current  
IC  
2N5664 2N5666, S  
2N5665 2N5667, S  
2N5666U3  
Total  
Power Dissipation  
1/  
@ TA = +25°C  
@ TC = +100°C  
2.5  
30  
1.2  
15  
1.5  
35  
PT  
W
Operating & Storage Junction  
Temperature Range  
TO-5  
2N5666, 2N5667  
TJ, Tstg  
-65 to +200  
°C  
Note: 1) Consult 19500/455 for thermal derating curves.  
ELECTRICAL CHARACTERISTICS (TC = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERTICS  
Collector-Emitter Breakdown Voltage  
TO-39 (TO-205AD)  
2N5666S, 2N5667S  
IC = 10mAdc  
2N5664, 2N5666  
250  
400  
V(BR)CER  
V(BR)EBO  
ICES  
Vdc  
Vdc  
2N5665, 2N5667  
Emitter-Base Breakdown Voltage  
6.0  
IE = 10μAdc  
Collector-Emitter Cutoff Current  
VCE = 200Vdc  
2N5664, 2N5666  
2N5665, 2N5667  
0.2  
0.2  
μAdc  
VCE = 300Vdc  
U-3  
2N5666U3  
Collector-Base Cutoff Current  
VCB = 200Vdc  
2N5664, 2N5666  
2N5665, 2N5667  
0.1  
1.0  
μAdc  
V
CB = 250Vdc  
VCB = 300Vdc  
CB = 400Vdc  
mAdc  
ICBO  
0.1  
1.0  
μAdc  
mAdc  
V
T4-LDS-0062 Rev. 1 (081095)  
Page 1 of 3  

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