是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-3 |
包装说明: | SIMILAR TO TO-3, 2 PIN | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.18 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 12 A | 集电极-发射极最大电压: | 80 V |
配置: | DARLINGTON WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 150 |
JEDEC-95代码: | TO-204AA | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Qualified |
参考标准: | MIL-19500/502D | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N6059 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JANTXV2N6193 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, T | |
JANTXV2N6211 | MICROSEMI |
获取价格 |
PNP HIGH POWER SILICON TRANSISTOR | |
JANTXV2N6212 | MICROSEMI |
获取价格 |
PNP HIGH POWER SILICON TRANSISTOR | |
JANTXV2N6213 | MICROSEMI |
获取价格 |
PNP HIGH POWER SILICON TRANSISTOR | |
JANTXV2N6249 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
JANTXV2N6249T1 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-2 | |
JANTXV2N6250 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
JANTXV2N6250T1 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-2 | |
JANTXV2N6251 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR |