Datasheet > JANTXV2N5794U

JANTXV2N5794U

更新时间： 2024-01-09 22:48:21

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体管
页数	文件大小	规格书
2页	123K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, SURFACE MOUNT PACKAGE-6

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JANTXV2N5794U 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

JANTXV2N5794U 数据手册

TECHNICAL DATA

NPN SILICON DUAL TRANSISTOR

Qualified per MIL-PRF-19500/495

Devices

Qualified Level

JAN

2N5794

2N5793

JANTX

JANTXV

2N5794U

MAXIMUM RATINGS

Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Units

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Vdc

6.0

600

Vdc

TO-78*

mAdc

One

Total

Section⁽¹⁾Device⁽²⁾

Total Power Dissipation

@ T_A= +25⁰C

0.5

0.6

⁰C

P_T

Operating & Storage Junction Temperature Range

-65 to +200

T_op,

stg

1) Derate linearly 2.86 mW/⁰C for T_A> +25⁰C

2) Derate linearly 3.43 mW/⁰C for T_A> +25⁰C

6 PIN SURFACE

MOUNT*

*See

MILPRF19500/495 for

package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I_C= 10 mAdc

Vdc

V_(BR)CEO

I_CBO

Collector-Base Cutoff Current

V_CB= 75 Vdc

µAdc

ηAdc

V_CB= 50 Vdc

Emitter-Base Cutoff Current

V_EB= 6.0 Vdc

µAdc

ηAdc

I_EBO

V_EB= 4.0 Vdc

6 Lake Street, Lawrence, MA 01841

42203

Page 1 of 2

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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