Datasheet > JANTXV2N5795

JANTXV2N5795

更新时间： 2024-11-23 11:24:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	128K
描述
PNP DUAL SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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JANTXV2N5795 数据手册

TECHNICAL DATA

PNP DUAL SILICON TRANSISTOR

Qualified per MIL-PRF-19500/496

Devices

Qualified Level

JAN

2N5796

2N5795

JANTX

JANTXV

2N5796U

MAXIMUM RATINGS

Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Units

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Vdc

5.0

Vdc

TO-78*

mAdc

600

Both⁽²⁾

One⁽¹⁾

Section

0.5

Sections

Total Power Dissipation

@ T_A= +25⁰C

0.6

⁰C

P_T

Operating & Storage Junction Temperature Range

-65 to +175

T_J,T

stg

1) Derate linearly 2.86 mW/⁰C for T_A≥ +25⁰C

2) Derate linearly 3.43 mW/⁰C for T_A≥ +25⁰C

6 PIN SURFACE

MOUNT*

*See

MILPRF19500/496 for

package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 10 mAdc

Vdc

V_(BR)CEO

I_CBO

Collector-Base Cutoff Current

V_CB= 50 Vdc

ηAdc

µAdc

V_CBO= 60 Vdc

Emitter-Base Cutoff Current

V_EB= 3.0 Vdc

I_EBO

ηAdc

µAdc

100

V_EB= 5.0 Vdc

6 Lake Street, Lawrence, MA 01841

42203

Page 1 of 2

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

中文翻译

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