是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.11 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 200 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-66 | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 30 W |
认证状态: | Not Qualified | 参考标准: | MIL |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 60 MHz |
VCEsat-Max: | 0.4 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N5665 | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR | |
JANTXV2N5665 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 | |
JANTXV2N5666 | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR | |
JANTXV2N5666 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 | |
JANTXV2N5666S | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR | |
JANTXV2N5666U3 | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR | |
JANTXV2N5667 | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR | |
JANTXV2N5667S | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR | |
JANTXV2N5671 | MICROSEMI |
获取价格 |
NPN HIGH POWER SILICON TRANSISTOR | |
JANTXV2N5672 | MICROSEMI |
获取价格 |
NPN HIGH POWER SILICON TRANSISTOR |