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JANTXV2N5662 PDF预览

JANTXV2N5662

更新时间: 2024-11-23 05:11:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
2页 63K
描述
NPN POWER SILICON TRANSISTOR

JANTXV2N5662 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-5
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.27
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:200 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-5
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Qualified参考标准:MIL-19500
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
最大关闭时间(toff):850 ns最大开启时间(吨):250 ns
Base Number Matches:1

JANTXV2N5662 数据手册

 浏览型号JANTXV2N5662的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 454  
Devices  
Qualified Level  
JAN, JANTX  
JANTXV  
2N5660  
2N5661  
2N5662  
2N5663  
MAXIMUM RATINGS  
Ratings  
2N5660 2N5661  
2N5662 2N5663  
Symbol  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Base Current  
200  
250  
250  
300  
400  
400  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VCER  
VEBO  
IB  
6.0  
0.5  
2.0  
TO-66*  
(TO-213AA)  
2N5660, 2N5661  
Collector Current  
IC  
2N5660 2N5662  
2N5661 2N5663  
Total Power Dissipation  
@ TA = +250C  
@ TC = +1000C  
2.0(1)  
20(3)  
1.0(2)  
15(4)  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
2N5660  
2N5661  
2N5662  
2N5663  
Characteristics  
Symbol  
Unit  
TO-5*  
2N5662, 2N5663  
R
R
Thermal Resistance, Junction-to-Case  
Junction-to-Ambient  
qJC  
0C/W  
5.0  
87.5  
6.67  
145.8  
qJA  
1) Derate linearly 11.4 mW/0C for TA >+ 250C  
2) Derate linearly 5.7 mW/0C for TA > +250C  
3) Derate linearly 200 mW/0C for TC > +1000C  
4) Derate linearly 150 mW/0C for TC > +1000C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
200  
300  
Vdc  
2N5660, 2N5662  
2N5661, 2N5663  
V(BR)  
CEO  
Collector-Base Breakdown Voltage  
250  
400  
Vdc  
Vdc  
IC = 10 mAdc, RBE = 100W  
2N5660, 2N5662  
2N5661, 2N5663  
V(BR)  
CER  
Emitter-Base Breakdown Voltage  
IE = 10 mAdc  
6.0  
V(BR)  
EBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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