是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-5 |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.27 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 200 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-5 |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Qualified | 参考标准: | MIL-19500 |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 850 ns | 最大开启时间(吨): | 250 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N5663 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
JANTXV2N5664 | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR | |
JANTXV2N5664 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 | |
JANTXV2N5665 | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR | |
JANTXV2N5665 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 | |
JANTXV2N5666 | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR | |
JANTXV2N5666 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 | |
JANTXV2N5666S | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR | |
JANTXV2N5666U3 | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR | |
JANTXV2N5667 | MICROSEMI |
获取价格 |
NPN POWER SILICON SWITCHING TRANSISTOR |