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JANTXV2N5664 PDF预览

JANTXV2N5664

更新时间: 2024-11-23 12:03:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关晶体管功率双极晶体管局域网
页数 文件大小 规格书
3页 118K
描述
NPN POWER SILICON SWITCHING TRANSISTOR

JANTXV2N5664 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-66
包装说明:TO-66, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.21
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-66JESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):30 W
认证状态:Qualified参考标准:MIL-19500/455E
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzBase Number Matches:1

JANTXV2N5664 数据手册

 浏览型号JANTXV2N5664的Datasheet PDF文件第2页浏览型号JANTXV2N5664的Datasheet PDF文件第3页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN POWER SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/455  
DEVICES  
LEVELS  
2N5664  
2N5665  
2N5666  
2N5666S  
2N5666U3  
2N5667  
2N5667S  
JAN  
JANTX  
JANTV  
JANS  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
2N5664  
2N5666, S 2N5667, S  
2N5665  
Parameters / Test Conditions  
Symbol  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
VCEO  
VCBO  
VEBO  
IB  
200  
250  
300  
400  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
TO-66 (TO-213AA)  
2N5664, 2N5665  
6.0  
1.0  
5.0  
Collector Current  
IC  
2N5664 2N5666, S  
2N5665 2N5667, S  
2N5666U3  
Total  
Power Dissipation  
1/  
@ TA = +25°C  
@ TC = +100°C  
2.5  
30  
1.2  
15  
1.5  
35  
PT  
W
Operating & Storage Junction  
Temperature Range  
TO-5  
2N5666, 2N5667  
TJ, Tstg  
-65 to +200  
°C  
Note: 1) Consult 19500/455 for thermal derating curves.  
ELECTRICAL CHARACTERISTICS (TC = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERTICS  
Collector-Emitter Breakdown Voltage  
TO-39 (TO-205AD)  
2N5666S, 2N5667S  
IC = 10mAdc  
2N5664, 2N5666  
250  
400  
V(BR)CER  
V(BR)EBO  
ICES  
Vdc  
Vdc  
2N5665, 2N5667  
Emitter-Base Breakdown Voltage  
6.0  
IE = 10μAdc  
Collector-Emitter Cutoff Current  
VCE = 200Vdc  
2N5664, 2N5666  
2N5665, 2N5667  
0.2  
0.2  
μAdc  
VCE = 300Vdc  
U-3  
2N5666U3  
Collector-Base Cutoff Current  
VCB = 200Vdc  
2N5664, 2N5666  
2N5665, 2N5667  
0.1  
1.0  
μAdc  
V
CB = 250Vdc  
VCB = 300Vdc  
CB = 400Vdc  
mAdc  
ICBO  
0.1  
1.0  
μAdc  
mAdc  
V
T4-LDS-0062 Rev. 1 (081095)  
Page 1 of 3  

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