The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 6 June 2002.
INCH-POUND
MIL-PRF-19500/560E
6 March 2002
SUPERSEDING
MIL-PRF-19500/560D
3 January 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING
TYPE 2N5339 AND 2N5339U3 JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon switching transistors. Four
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two
levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-39), figures 2, 3, and 4 for JANHC and JANKC (die) and figure 5 for
U3 devices (TO-276AA) dimensions.
1.3 Maximum ratings.
Types
PT (1)
TA =
+25°C
PT (2)
TC =
+25°C
VCBO
V dc
VCEO
V dc
VEBO
V dc
IC
IB
TOP and TSTG
R
qJC
W
W
A dc
A dc
°C
°C/W
2N5339
2N5339U3
1.0
1.0
100
100
100
100
6.0
6.0
5.0
5.0
1.0
1.0
-65 to +200
-65 to +200
17.5
12.5
100
(1) Derate linearly at 5.71 mW/°C above TA > +25°C.
(2) Derate linearly from 80 mW/°C to 571 mW°C.
1.4 Primary electrical characteristics TA = +25°C. (Unless otherwise indicated, applies to all devices.)
hFE1 (1)
hFE2 (1)
hFE3 (1)
VCE = 2.0 V dc; IC = 5.0 A dc
Limits
VCE = 2.0 V dc; IC = 0.5 A dc VCE = 2.0 V dc; IC = 2.0 A dc
Min
60
60
40
Max
240
(1) Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.