5秒后页面跳转
JANTXV2N5582 PDF预览

JANTXV2N5582

更新时间: 2024-11-26 00:00:03
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
页数 文件大小 规格书
14页 80K
描述
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-46

JANTXV2N5582 数据手册

 浏览型号JANTXV2N5582的Datasheet PDF文件第2页浏览型号JANTXV2N5582的Datasheet PDF文件第3页浏览型号JANTXV2N5582的Datasheet PDF文件第4页浏览型号JANTXV2N5582的Datasheet PDF文件第5页浏览型号JANTXV2N5582的Datasheet PDF文件第6页浏览型号JANTXV2N5582的Datasheet PDF文件第7页 
This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly  
different in format due to electronic conversion processes. Actual technical content will be the same.  
The documentation and process conversion  
measures necessary to comply with this  
revision shall be completed by 10 November 1998.  
INCH-POUND  
MIL-PRF-19500/423D  
10 August 1998  
SUPERSEDING  
MIL-PRF-19500/423C  
29 August 1997  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING  
TYPES 2N5581 AND 2N5582, JAN, JANTX, AND JANTXV  
This specification is approved for use by the Depart-  
ment of the Air Force and is available for use by all  
Departments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN silicon switching transistors. Three levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See 3.3 (similar to TO-46).  
1.3 Maximum ratings.  
P
T
P
T
V
V
I
T
CBO  
CEO  
C
OP  
C
T
= +25 C  
W
T
= +25 C  
A
C
W
V dc  
V dc  
mA dc  
0.5 1/  
2.0 2/  
75  
50  
800  
-55 to +200  
1/ Derate linearly 2.86 mW/ C above T = +25 C.  
A
2/ Derate linearly 11.43 mW/ C above T = +25 C.  
C
1.4 Primary electrical characteristics.  
h
h
Cobo  
h
FE2  
FE4  
= 10 V dc  
CE  
fe  
= 20 V dc  
Switching  
V
CE  
= 20 mA dc  
V
= 10 V dc  
V
= 10 V dc  
CE  
= 1.0 mA dc  
V
CB  
I
C
I
C
I
= 150 mA dc  
1/  
f = 100 MHz  
I
E
100 kHz  
= 0  
f
C
t
on  
t
t + t  
on off  
off  
1 MHz  
2N5581 2N5582  
35 75  
2N5581 2N5582  
pF  
ns  
35  
ns  
ns  
18  
Min  
Max  
40  
100  
300  
2.5  
5.0  
120  
8
300  
1/ Pulsed (see 4.5.1).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document  
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH  
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this  
document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

与JANTXV2N5582相关器件

型号 品牌 获取价格 描述 数据表
JANTXV2N5660 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
JANTXV2N5661 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
JANTXV2N5662 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
JANTXV2N5663 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
JANTXV2N5664 MICROSEMI

获取价格

NPN POWER SILICON SWITCHING TRANSISTOR
JANTXV2N5664 APITECH

获取价格

Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2
JANTXV2N5665 MICROSEMI

获取价格

NPN POWER SILICON SWITCHING TRANSISTOR
JANTXV2N5665 APITECH

获取价格

Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2
JANTXV2N5666 MICROSEMI

获取价格

NPN POWER SILICON SWITCHING TRANSISTOR
JANTXV2N5666 APITECH

获取价格

Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3