Datasheet > JANTXV2N5238S

JANTXV2N5238S

更新时间： 2024-11-23 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
21页	100K
描述
TRANSISTOR \| BJT \| NPN \| 170V V(BR)CEO \| 5A I(C) \| TO-5VAR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANTXV2N5238S 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 5 October 2002.

INCH-POUND

MIL-PRF-19500/394G

5 July 2002

SUPERSEDING

MIL-PRF-19500/394F

23 April 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING

TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S

JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage

transistors. Four levels of product assurance are provided for each encapsulated device type as specified in

MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (TO- 5) and figures 2 and 3 (JANHC and JANKC).

1.3 Maximum ratings.

Types

CBO

CEO

EBO

and

R_qJC

(max)

R_qJA

(min)

T (1)

T (2)

STG

= +25°C

+25°C

V dc

A dc

°C

°C/mW

2N4150, S

2N5237, S

2N5238, S

1.0

5.0

100

150

200

120

170

-65 to +200

.020

.175

(1) Derate linearly 5.7 mW/°C for T_A> +25°C.

(2) Derate linearly 50 mW/°C for T_C> +100°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.

Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form

1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...21

中文翻译

下载PDF

与JANTXV2N5238S相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N5250	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 90A I(C) \| STR-1/2
JANTXV2N5251	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 90A I(C) \| STR-1/2
JANTXV2N5302	MICROSEMI	获取价格	NPN HIGH POWER SILICON TRANSISTOR
JANTXV2N5303	MICROSEMI	获取价格	NPN HIGH POWER SILICON TRANSISTOR
JANTXV2N5339	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-39
JANTXV2N5339U3	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA
JANTXV2N5415	MICROSEMI	获取价格	PNP LOW POWER SILICON TRANSISTOR
JANTXV2N5415S	MICROSEMI	获取价格	PNP LOW POWER SILICON TRANSISTOR
JANTXV2N5415U4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), PNP,
JANTXV2N5415UA	ETC	获取价格	BJT