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JANSF2N7652U2A

更新时间: 2024-11-07 14:56:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 1280K
描述
Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300 krad TID, QPL

JANSF2N7652U2A 数据手册

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PD-97894B  
IRHNS9A7064  
JANSR2N7652U2A  
60V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SupIR-SMD)  
REF: MIL-PRF-19500/777  
TECHNOLOGY  
R
9
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
JANSR2N7652U2A  
JANSF2N7652U2A  
IRHNS9A7064  
IRHNS9A3064  
100 kRads (Si)  
300 kRads (Si)  
100A*  
100A*  
4.0m  
4.0m  
SupIR-SMD  
Description  
Features  
Low RDS(on)  
IR HiRel R9 technology provides superior power MOSFETs  
for space applications. These devices have improved  
immunity to Single Event Effect (SEE) and have been  
characterized for useful performance with Linear Energy  
Transfer (LET) up to 90MeV/(mg/cm2). Their combination of  
low RDS(on) and faster switching times reduces the power  
losses and increases power density in todays high speed  
switching applications such as DC-DC converters and motor  
controllers. These devices retain all of the well established  
advantages of MOSFETs such as voltage control, fast  
switching temperature stability of electrical parameters.  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Surface Mount  
ESD Rating: Class 3B per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Parameter  
Value  
Units  
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current  
100*  
A
100*  
400  
IDM @ TC = 25°C  
PD @ TC = 25°C  
Pulsed Drain Current   
Maximum Power Dissipation  
250  
W
W/°C  
V
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
2.0  
VGS  
EAS  
IAR  
± 20  
4000  
100  
mJ  
A
EAR  
dv/dt  
TJ  
25  
mJ  
V/ns  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
4.8  
-55 to + 150  
TSTG  
°C  
g
300 (for 5s)  
3.3 (Typical)  
Weight  
* Current is limited by package  
For Footnotes, refer to the page 2.  
1
2021-03-08  
International Rectifier HiRel Products, Inc.  

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