Datasheet > JANSF2N7653U2A

JANSF2N7653U2A

更新时间： 2024-09-17 14:56:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1166K
描述
Rad hard, 100V, 100A, single, N-channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300 krad TID, QPL

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JANSF2N7653U2A 数据手册

IRHNS9A7160 (JANSR2N7653U2A)

PD-97930C

Radiation Hardened Power MOSFET

Surface-Mount (SupIR-SMD™)

100V, 100A, N-channel, R9 Superjunction Technology

Features

Product Summary



Single event effect (SEE) hardened

(up to LET of 89.8 MeV·cm²/mg)

Low R_DS(on)



Part number: IRHNS9A7160 (JANSR2N7653U2A),

IRHNS9A3160 (JANSF2N7653U2A)

REF: MIL-PRF-19500/777



Radiation level: 100 krad (Si), 300 krad (Si)

R_{DS(on), max}: 6.5m

Fast switching

Low total gate charge

Simple drive requirements

Hermetically sealed

I_D: 100A*

Ceramic package

Direct-to-PCB attach

Light weight

ESD rating: class 3B per MIL-STD-750, Method 1020

SupIR-SMD™

Potential Applications



DC-DC converter

Motor drives



Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 89.8 MeV·cm²/mg. Their combination of low R_DS(on)and fast switching times will allow for

better performance in applications such as DC-DC converters or motor drives. These devices retain all of the well

established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.

Ordering Information

Table 1

Ordering options

Part number

IRHNS9A7160

Package

Screening Level

COTS

TID Level

SupIR-SMD™

100krad(Si)

300krad(Si)

JANSR2N7653U2A

IRHNS9A3160

JANS

COTS

JANSF2N7653U2A

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2022-01-21

12 3 4 5 6 7...14

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与JANSF2N7653U2A相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7659D5	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
JANSF2N7659T3	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-25
JANSF2N7660D5	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
JANSF2N7660T3	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
JANSF2N7665U2A	INFINEON	获取价格	Rad hard, -100V, -91A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si)
JANSG2N2221A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSG2N2221AUA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSG2N2221AUB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSG2N2221AUBC	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSG2N2222A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A

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