5秒后页面跳转
JANSF2N7665U2A PDF预览

JANSF2N7665U2A

更新时间: 2024-11-19 15:18:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 503K
描述
Rad hard, -100V, -91A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si) TID, QPL

JANSF2N7665U2A 数据手册

 浏览型号JANSF2N7665U2A的Datasheet PDF文件第2页浏览型号JANSF2N7665U2A的Datasheet PDF文件第3页浏览型号JANSF2N7665U2A的Datasheet PDF文件第4页浏览型号JANSF2N7665U2A的Datasheet PDF文件第5页浏览型号JANSF2N7665U2A的Datasheet PDF文件第6页浏览型号JANSF2N7665U2A的Datasheet PDF文件第7页 
IRHNS9A97160 (JANSR2N7665U2A)  
Radiation Hardened Power MOSFET  
PD-97984A  
Surface-Mount (SupIR-SMD)  
-100V, -91A, P-channel, R9 Superjunction Technology  
Features  
Product Summary  
Single event effect (SEE) hardened  
(up to LET of 91 MeV·cm2/mg)  
Low RDS (on)  
BVDSS: -100V  
ID: -91A  
RDS (on) max: 17m  
QG max: 230Nc  
Improved SOA for linear mode operation  
Fast switching  
REF: MIL-PRF-19500/791  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
Electrically isolated  
Ceramic eyelets  
Light weight  
ESD rating: Class 3B per MIL-STD-750, Method 1020  
Potential Applications  
SupIR-
SMD™  
DC-DC converter  
Motor drives  
Inrush current protection  
Power distribution  
Product Validation  
Qualified according to MIL-PRF-19500 for space applications  
Description  
IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel  
MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices  
have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with  
Linear Energy Transfer (LET) up to 91 MeV·cm2/mg. Their combination of low RDS (on) and improved SOA allows for  
better performance in applications such as Solid-State Power Controllers (SSPC), DC-DC converters and motor  
drives. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast  
switching and temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Part number  
IRHNS9A97160  
Ordering options  
Package  
Screening Level  
COTS  
TID Level  
SupIR-SMD™  
SupIR-SMD™  
SupIR-SMD™  
SupIR-SMD™  
100 krad (Si)  
100 krad (Si)  
300 krad (Si)  
300 krad (Si)  
JANSR2N7665U2A  
IRHNS9A93160  
JANS  
COTS  
JANSF2N7665U2A  
JANS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 14  
www.infineon.com/irhirel  
2023-06-13  
 
 
 
 
 

与JANSF2N7665U2A相关器件

型号 品牌 获取价格 描述 数据表
JANSG2N2221A MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSG2N2221AUA MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSG2N2221AUB MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSG2N2221AUBC MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSG2N2222A MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSG2N7261 INFINEON

获取价格

Rad hard, 100V, 8A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 500 kra
JANSG2N72610U INFINEON

获取价格

8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18
JANSG2N7261U INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18)
JANSG2N7262 INFINEON

获取价格

Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 500 k
JANSG2N7262U INFINEON

获取价格

Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC,