Datasheet > JANSF2N7659D5

JANSF2N7659D5

更新时间： 2024-11-06 14:56:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	746K
描述
Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 300 krad(Si) TID, QPL

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JANSF2N7659D5 数据手册

IRHYB9A97034CM (JANSR2N7659D5)

Radiation Hardened Power MOSFET

PD-97993

Thru-Hole (Low-Ohmic Tabless TO-257AA)

-60V, -30A, P-channel, R9 Superjunction Technology

Product Summary

Features

•

Single event effect (SEE) hardened

•

Part number: IRHYB9A97034CM (JANSR2N7659D5),

IRHYB9A93034CM (JANSF2N7659D5)

REF: MIL-PRF-19500/780

Radiation level: 100 krad (Si), 300 krad (Si)

R_{DS(on), max}: 46m

(up to LET of 91.3 MeV·cm²/mg)

Low R_DS(on)

•

Improved SOA for linear mode operation

Improved avalanche energy

Simple drive requirements

Hermetically sealed

I_D: -30A*

Electrically isolated

ESD rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

•

Power distribution

Low Ohmic Tabless -

TO-257AA

Linear regulator

Latching current limiter

Load and protection switch

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel

MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices

have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with

Linear Energy Transfer (LET) up to 91.3 MeV·cm²/mg. Their combination of low R_DS(on)and improved SOA allows

for better performance in applications such as Latching Current Limiters (LCL) or Solid-State Power Controllers

(SSPC). These devices retain all of the well established advantages of MOSFETs such as voltage control, fast

switching and temperature stability of electrical parameters.

Ordering Information

Table 1

Ordering options

Part number

Package

Screening Level

COTS

TID Level

IRHYB9A97034CM

JANSR2N7659D5

IRHYB9A93034CM

JANSF2N7659D5

Low Ohmic Tabless TO-257AA

100krad(Si)

300krad(Si)

JANS

COTS

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2021-11-08

12 3 4 5 6 7...14

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与JANSF2N7659D5相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7659T3	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-25
JANSF2N7660D5	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
JANSF2N7660T3	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
JANSF2N7665U2A	INFINEON	获取价格	Rad hard, -100V, -91A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si)
JANSG2N2221A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSG2N2221AUA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSG2N2221AUB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSG2N2221AUBC	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSG2N2222A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSG2N7261	INFINEON	获取价格	Rad hard, 100V, 8A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 500 kra

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