是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.7 |
其他特性: | RADIATION HARDENED | 雪崩能效等级(Eas): | 240 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 5.5 A | 最大漏源导通电阻: | 0.36 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-39 |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 22 A | 认证状态: | Qualified |
参考标准: | MIL-19500/601 | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSG2N7262U | INFINEON |
获取价格 |
Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC, | |
JANSG2N7268 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE | |
JANSG2N7268U | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) | |
JANSG2N7269 | INFINEON |
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Rad hard, 200V, 26A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 500 kr | |
JANSG2N7269U | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
JANSG2N7270 | INFINEON |
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Rad hard, 500V, 11A, single, N-channel MOSFET, R5 in a TO-254AA package - TO-254AA, 500 kr | |
JANSG2N7270U | INFINEON |
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Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
JANSG2N7281 | INFINEON |
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Power Field-Effect Transistor, 9.4A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met | |
JANSG2N7380 | INFINEON |
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Rad hard, 100V, 14.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 500 | |
JANSG2N7381 | ETC |
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200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |