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JANSG2N7262 PDF预览

JANSG2N7262

更新时间: 2024-11-19 11:01:15
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 292K
描述
Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 500 krad(Si) TID, QPL

JANSG2N7262 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
其他特性:RADIATION HARDENED雪崩能效等级(Eas):240 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):5.5 A最大漏源导通电阻:0.36 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-39
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):22 A认证状态:Qualified
参考标准:MIL-19500/601表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANSG2N7262 数据手册

 浏览型号JANSG2N7262的Datasheet PDF文件第2页浏览型号JANSG2N7262的Datasheet PDF文件第3页浏览型号JANSG2N7262的Datasheet PDF文件第4页浏览型号JANSG2N7262的Datasheet PDF文件第5页浏览型号JANSG2N7262的Datasheet PDF文件第6页浏览型号JANSG2N7262的Datasheet PDF文件第7页 
PD - 90672E  
IRHF7230  
JANSR2N7262  
200V, N-CHANNEL  
REF: MIL-PRF-19500/601  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-39)  
RAD-HardHEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHF7230  
IRHF3230  
IRHF4230  
IRHF8230  
100K Rads (Si)  
300K Rads (Si)  
500K Rads (Si)  
0.35Ω  
0.35Ω  
0.35Ω  
5.5A JANSR2N7262  
5.5A JANSF2N7262  
5.5A JANSG2N7262  
5.5A JANSH2N7262  
1000K Rads (Si) 0.35Ω  
TO-39  
International Rectifier’s RAD-HardTM HEXFET®  
technology provides high performance power  
MOSFETs for space applications. This technology  
has over a decade of proven performance and  
reliability in satellite applications. These devices have  
been characterized for both Total Dose and Single  
Event Effects (SEE). The combination of low Rdson  
and low gate charge reduces the power losses in  
switching applications such as DC to DC converters  
and motor control. These devices retain all of the well  
established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Features:  
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
5.5  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
3.5  
22  
D
GS  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
Linear Derating Factor  
0.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
240  
mJ  
A
AS  
I
5.5  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
0.98 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
05/15/06  

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