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JANSG2N7269

更新时间: 2024-11-19 14:56:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 1651K
描述
Rad hard, 200V, 26A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 500 krad(Si) TID, QPL

JANSG2N7269 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, S-XSFM-P3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
Is Samacsys:N其他特性:RADIATION HARDENED
雪崩能效等级(Eas):500 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):26 A最大漏源导通电阻:0.11 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-XSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):104 A认证状态:Qualified
参考标准:MIL-19500/603表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANSG2N7269 数据手册

 浏览型号JANSG2N7269的Datasheet PDF文件第2页浏览型号JANSG2N7269的Datasheet PDF文件第3页浏览型号JANSG2N7269的Datasheet PDF文件第4页浏览型号JANSG2N7269的Datasheet PDF文件第5页浏览型号JANSG2N7269的Datasheet PDF文件第6页浏览型号JANSG2N7269的Datasheet PDF文件第7页 
IRHM7250 (JANSR2N7269)  
PD-90674H  
Radiation Hardened Power MOSFET  
Thru-Hole (TO-254AA)  
200V, 26A, N-channel, Rad Hard HEXFETTechnology  
Product Summary  
Features  
Single event effect (SEE) hardened  
BVDSS: 200V  
ID : 26A  
RDS(on),max : 100m(100 krad(Si))  
QG, max : 170nC  
Low RDS(on)  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
REF: MIL-PRF-19500/603  
Electrically isolated  
Ceramic eyelets  
ESD rating: Class 3A per MIL-STD-750, Method 1020  
Potential Applications  
DC-DC converter  
Motor drives  
TO-254AA  
Product Validation  
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications  
Description  
IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This  
technology has over a decade of proven performance and reliability in satellite applications. These devices have  
been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low  
gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.  
These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching  
and temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Part number  
IRHM7250  
Ordering options  
Package  
Screening Level  
COTS  
TID Level  
TO-254AA  
TO-254AA  
TO-254AA  
TO-254AA  
TO-254AA  
TO-254AA  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
500 krad(Si)  
500 krad(Si)  
JANSR2N7269  
IRHM3250  
JANS  
COTS  
JANSF2N7269  
IRHM4250  
JANS  
COTS  
JANSG2N7269  
JANS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 13  
www.infineon.com/irhirel  
2022-05-16  
 
 
 
 
 

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