Datasheet > JAN2N6052

JAN2N6052

更新时间： 2024-11-29 04:22:47

品牌	Logo	应用领域
麦瑞 - MICREL		晶体晶体管
页数	文件大小	规格书
2页	53K
描述
PNP DARLINGTON POWER SILICON TRANSISTOR

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JAN2N6052 数据手册

TECHNICAL DATA

PNP DARLINGTON POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 501

Devices

Qualified Level

JAN

2N6051

2N6052

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol 2N6051 2N6052 Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

Collector Current

Total Power Dissipation⁽¹⁾

100

Vdc

Adc

V_CEO

V_CBO

V_EBO

I_B

100

5.0

0.2

I_C

@ T_C= +25⁰C

@ T_C= +100⁰C

150

⁰C

P_T

Operating & Storage Junction Temperature Range

-55 to +175

T_op_,T

stg

THERMAL CHARACTERISTICS

Characteristics

TO-3*

(TO-204AA)

Symbol

Max.

Unit

⁰C/W

Thermal Resistance, Junction-to-Case

1) Derate linearly at 1.0 W/⁰C above T_C> +25⁰C

1.0

qJC

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 100 mAdc

Symbol

Min.

Max.

Unit

Vdc

100

2N6051

2N6052

V_(BR)

CEO

Collector-Emitter Cutoff Current

V_CE= 40 Vdc

V_CE= 50 Vdc

Collector-Emitter Cutoff Current

V_CE= 80 Vdc, V_BE= 1.5 Vdc

V_CE= 100 Vdc, V_BE= 1.5 Vdc

Emitter-Base Cutoff Current

V_EB= 5.0 Vdc

1.0

mAdc

2N6051

2N6052

I_CEO

I_CEX

I_EBO

0.5

2N6051

2N6052

2.0

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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