生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.05 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 50 A | 集电极-发射极最大电压: | 150 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-204AE | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 250 W |
认证状态: | Not Qualified | 参考标准: | MIL |
表面贴装: | NO | 端子面层: | NOT SPECIFIED |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 30 MHz | 最大关闭时间(toff): | 1050 ns |
VCEsat-Max: | 3 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANTX2N6277 | MICROSEMI |
完全替代 |
PNP POWER SILICON TRANSISTOR | |
2N6277 | MICROSEMI |
完全替代 |
PNP POWER SILICON TRANSISTOR | |
2N6284 | STMICROELECTRONICS |
功能相似 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N6283 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6284 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6286 | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 20A I(C) | TO-3 | |
JAN2N6287 | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 20A I(C) | TO-3 | |
JAN2N6298 | MICROSEMI |
获取价格 |
PNP DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6299 | MICROSEMI |
获取价格 |
PNP DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6300 | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | TO-66 | |
JAN2N6301 | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 8A I(C) | TO-66 | |
JAN2N6306 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal | |
JAN2N6308 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal |