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IXYN100N65C3H1 PDF预览

IXYN100N65C3H1

更新时间: 2022-09-29 18:54:25
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
8页 232K
描述
IGBT XPT 650V 166A SOT-227B

IXYN100N65C3H1 数据手册

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Preliminary Technical Information  
XPTTM 650V GenX3TM IXYN100N65C3H1  
w/ Sonic Diode  
VCES = 650V  
IC110 = 90A  
VCE(sat)  2.3V  
tfi(typ) = 60ns  
Extreme Light Punch Through  
IGBT for 20-60kHz Switching  
SOT-227B, miniBLOC  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
E  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
G
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E   
IC25  
IC110  
IF110  
TC = 25°C  
TC = 110°C  
TC = 110°C  
160  
90  
50  
A
A
A
C
G = Gate, C = Collector, E = Emitter  
either emitter terminal can be used as  
Main or Kelvin Emitter  
ICM  
TC = 25°C, 1ms  
420  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
50  
A
600  
mJ  
Features  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 3  
Clamped Inductive Load  
ICM = 200  
A
μs  
W
(RBSOA)  
VCE VCES  
International Standard Package  
miniBLOC, with Aluminium Nitride  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
7
Isolation  
2500V~ Isolation Voltage  
Anti-Parallel Sonic Diode  
Optimized for 20-60kHz Switching  
Square RBSOA  
Short Circuit Capability  
High Current Handling Capability  
(SCSOA)  
RG = 10, Non Repetitive  
PC  
TC = 25°C  
600  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Advantages  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
High Power Density  
Low Gate Drive Requirement  
Weight  
30  
g
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
50 A  
3 mA  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
High Frequency Power Inverters  
VCE(sat)  
IC = 70A, VGE = 15V, Note 1  
1.8  
2.2  
2.3  
V
V
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100568B(10/14)  

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