型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXYN75N65C3D1 | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXYN80N90C3H1 | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXYN82N120C3 | IXYS |
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Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4 | |
IXYN82N120C3 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXYN82N120C3H1 | IXYS |
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High-Speed IGBT for 20-50 kHz Switching | |
IXYN82N120C3H1 | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXYP10N65B3D1 | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXYP10N65C3 | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXYP10N65C3D1 | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXYP10N65C3D1M | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT |