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IXYP10N65C3D1

更新时间: 2024-11-06 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 243K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产,具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。 它们具有正集电

IXYP10N65C3D1 数据手册

 浏览型号IXYP10N65C3D1的Datasheet PDF文件第2页浏览型号IXYP10N65C3D1的Datasheet PDF文件第3页浏览型号IXYP10N65C3D1的Datasheet PDF文件第4页浏览型号IXYP10N65C3D1的Datasheet PDF文件第5页浏览型号IXYP10N65C3D1的Datasheet PDF文件第6页浏览型号IXYP10N65C3D1的Datasheet PDF文件第7页 
Preliminary Technical Information  
XPTTM 650V IGBT  
GenX3TM w/Diode  
VCES = 650V  
IC110 = 10A  
VCE(sat)  2.50V  
tfi(typ) = 23ns  
IXYP10N65C3D1  
Extreme Light Punch Through  
IGBT for 20-60kHz Switching  
TO-220  
Symbol  
Test Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
C
Tab  
E
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G = Gate  
E = Emitter  
C
= Collector  
Tab = Collector  
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
30  
10  
9
A
A
A
A
TC = 110°C  
TC = 110°C  
TC = 25°C, 1ms  
54  
Features  
IA  
EAS  
TC = 25°C  
TC = 25°C  
5
A
Optimized for 20-60kHz Switching  
Square RBSOA  
Avalanche Rated  
Anti-Parallel Fast Diode  
Short Circuit Capability  
International Standard Package  
50  
mJ  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 50  
Clamped Inductive Load  
ICM = 20  
A
μs  
W
(RBSOA)  
VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
8
(SCSOA)  
RG = 150, Non Repetitive  
PC  
TC = 25°C  
160  
Advantages  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
High Power Density  
Extremely Rugged  
Low Gate Drive Requirement  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Applications  
Md  
Mounting Torque  
1.13/10  
2.5  
Nm/lb.in.  
g
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Weight  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
High Frequency Power Inverters  
10 A  
TJ = 150C  
TJ = 150C  
200 A  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 10A, VGE = 15V, Note 1  
2.27  
2.54  
2.50  
V
V
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100600C(6/16)  

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