5秒后页面跳转
IXYP10N65C3D1 PDF预览

IXYP10N65C3D1

更新时间: 2024-11-19 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 243K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产,具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。 它们具有正集电

IXYP10N65C3D1 数据手册

 浏览型号IXYP10N65C3D1的Datasheet PDF文件第2页浏览型号IXYP10N65C3D1的Datasheet PDF文件第3页浏览型号IXYP10N65C3D1的Datasheet PDF文件第4页浏览型号IXYP10N65C3D1的Datasheet PDF文件第5页浏览型号IXYP10N65C3D1的Datasheet PDF文件第6页浏览型号IXYP10N65C3D1的Datasheet PDF文件第7页 
Preliminary Technical Information  
XPTTM 650V IGBT  
GenX3TM w/Diode  
VCES = 650V  
IC110 = 10A  
VCE(sat)  2.50V  
tfi(typ) = 23ns  
IXYP10N65C3D1  
Extreme Light Punch Through  
IGBT for 20-60kHz Switching  
TO-220  
Symbol  
Test Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
C
Tab  
E
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G = Gate  
E = Emitter  
C
= Collector  
Tab = Collector  
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
30  
10  
9
A
A
A
A
TC = 110°C  
TC = 110°C  
TC = 25°C, 1ms  
54  
Features  
IA  
EAS  
TC = 25°C  
TC = 25°C  
5
A
Optimized for 20-60kHz Switching  
Square RBSOA  
Avalanche Rated  
Anti-Parallel Fast Diode  
Short Circuit Capability  
International Standard Package  
50  
mJ  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 50  
Clamped Inductive Load  
ICM = 20  
A
μs  
W
(RBSOA)  
VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
8
(SCSOA)  
RG = 150, Non Repetitive  
PC  
TC = 25°C  
160  
Advantages  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
High Power Density  
Extremely Rugged  
Low Gate Drive Requirement  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Applications  
Md  
Mounting Torque  
1.13/10  
2.5  
Nm/lb.in.  
g
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Weight  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
High Frequency Power Inverters  
10 A  
TJ = 150C  
TJ = 150C  
200 A  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 10A, VGE = 15V, Note 1  
2.27  
2.54  
2.50  
V
V
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100600C(6/16)  

与IXYP10N65C3D1相关器件

型号 品牌 获取价格 描述 数据表
IXYP10N65C3D1M LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP15N65C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP15N65C3D1 IXYS

获取价格

Preliminary Technical Information
IXYP15N65C3D1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP15N65C3D1M LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP20N120C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP20N65B3 IXYS

获取价格

Advance Technical Information
IXYP20N65B3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP20N65B3D1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP20N65C3D1 IXYS

获取价格

XPTTM 650V IGBT