5秒后页面跳转
IXYN140N120A4 PDF预览

IXYN140N120A4

更新时间: 2024-11-19 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极驱动双极性晶体管
页数 文件大小 规格书
8页 652K
描述
通过利用XPT?薄晶圆技术和第4代 (GenX4?) Trench IGBT流程,这些高达1200V的器件有助于降低栅极驱动要求和传导损耗。 具有低热阻、低损耗、高电流密度和低栅极电荷要求的特点。

IXYN140N120A4 数据手册

 浏览型号IXYN140N120A4的Datasheet PDF文件第2页浏览型号IXYN140N120A4的Datasheet PDF文件第3页浏览型号IXYN140N120A4的Datasheet PDF文件第4页浏览型号IXYN140N120A4的Datasheet PDF文件第5页浏览型号IXYN140N120A4的Datasheet PDF文件第6页浏览型号IXYN140N120A4的Datasheet PDF文件第7页 
1200V XPTTM IGBT  
GenX4TM  
VCES = 1200V  
IC110 = 140A  
VCE(sat)  1.70V  
tfi(typ) = 320ns  
IXYN140N120A4  
Ultra Low-Vsat IGBT for  
up to 5kHz Switching  
SOT-227B, miniBLOC  
E153432  
E  
Symbol  
Test Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TJ = 25°C to 175°C  
1200  
1200  
V
V
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E   
C
IC25  
TC= 25°C (Chip Capability)  
380  
A
G = Gate, C = Collector, E = Emitter  
ILRMS  
IC110  
ICM  
Terminal Current Limit  
TC= 110°C  
200  
140  
A
A
either emitter terminal can be used as  
Main or Kelvin Emitter  
TC = 25°C, 1ms  
1200  
A
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 2  
Clamped Inductive Load  
ICM = 280  
0.8 • VCES  
A
V
PC  
TC = 25°C  
1070  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
miniBLOC, with Aluminium Nitride  
-55 ... +175  
Isolation  
International Standard Package  
Isolation Voltage 2500V~  
Optimized for Low Conduction Losses  
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Positive Thermal Coefficient of  
Vce(sat)  
High Current Handling Capability  
Weight  
30  
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1200  
4.5  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
6.5  
25 A  
mA  
200 nA  
TJ = 125C  
TJ = 150C  
5
IGES  
VCE = 0V, VGE = 20V  
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
1.34  
1.50  
1.70  
V
V
Inrush Current Protection Circuits  
©2020 Littelfuse, Inc.  
DS100974A(6/20)  

与IXYN140N120A4相关器件

型号 品牌 获取价格 描述 数据表
IXYN150N60B3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYN300N65A3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYN30N170CV1 LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、
IXYN50N170CV1 LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的IGBT工艺研发,具有低热阻、低尾电流、
IXYN75N65C3D1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYN80N90C3H1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYN82N120C3 IXYS

获取价格

Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4
IXYN82N120C3 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,
IXYN82N120C3H1 IXYS

获取价格

High-Speed IGBT for 20-50 kHz Switching
IXYN82N120C3H1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT