XPTTM 650V IGBT
GenX3TM w/ Diode
IXYN120N65B3D1
VCES = 650V
IC110 = 120A
VCE(sat) 1.90V
tfi(typ) = 107ns
Extreme Light Punch through
IGBT for 10-30kHz Switching
E
SOT-227B, miniBLOC
E153432
Symbol
Test Conditions
Maximum Ratings
E
VCES
VCGR
TJ = 25°C to 175°C
650
650
V
G
TJ = 25°C to 175°C, RGE = 1M
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
TC = 25°C (Chip Capability)
250
A
E
C
ILRMS
IC110
IF110
Terminal Current Limit
TC = 110°C
TC = 110°C
200
120
86
A
A
A
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
ICM
TC = 25°C, 1ms
770
A
IA
EAS
TC = 25°C
TC = 25°C
60
1
A
J
SSOA
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
ICM = 240
A
μs
W
Features
(RBSOA)
VCE VCES
International Standard Package
miniBLOC, with Aluminium Nitride
tsc
VGE = 15V, VCE = 400V, TJ = 150°C
8
(SCSOA)
RG = 82, Non Repetitive
Isolation
2500V~ Isolation Voltage
Optimized for 10-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Anti-Parallel Fast Diode
PC
TC = 25°C
830
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
-55 ... +175
TVISOL
50/60Hz
IISOL 1mA
t = 1min
t = 1s
2500
3000
V~
V~
Md
Mounting Torque
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
Advantages
Weight
30
g
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25C, Unless Otherwise Specified)
Min.
650
3.5
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
6.0
25 A
1.5 mA
TJ = 150C
IGES
VCE = 0V, VGE = 20V
100 nA
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 150C
1.55
1.77
1.90
V
V
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DS100663B(4/19)