5秒后页面跳转
IXYN82N120C3H1 PDF预览

IXYN82N120C3H1

更新时间: 2024-11-18 12:35:35
品牌 Logo 应用领域
IXYS 开关双极性晶体管
页数 文件大小 规格书
7页 192K
描述
High-Speed IGBT for 20-50 kHz Switching

IXYN82N120C3H1 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PUFM-X4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:4.37其他特性:AVALANCHE RATED, UL RECOGNIZED
外壳连接:ISOLATED最大集电极电流 (IC):105 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):500 W子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):295 ns
标称接通时间 (ton):119 nsBase Number Matches:1

IXYN82N120C3H1 数据手册

 浏览型号IXYN82N120C3H1的Datasheet PDF文件第2页浏览型号IXYN82N120C3H1的Datasheet PDF文件第3页浏览型号IXYN82N120C3H1的Datasheet PDF文件第4页浏览型号IXYN82N120C3H1的Datasheet PDF文件第5页浏览型号IXYN82N120C3H1的Datasheet PDF文件第6页浏览型号IXYN82N120C3H1的Datasheet PDF文件第7页 
1200V XPTTM IGBT  
GenX3TM w/ Diode  
VCES = 1200V  
IC110 = 46A  
VCE(sat) 3.2V  
tfi(typ) = 93ns  
IXYN82N120C3H1  
High-Speed IGBT  
for 20-50 kHz Switching  
SOT-227B, miniBLOC  
E153432  
E c  
Symbol  
Test Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
TJ = 25°C to 150°C, RGE = 1MΩ  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E c  
C
IC25  
IC110  
IF110  
TC = 25°C (Chip Capability)  
TC = 110°C  
TC = 110°C  
105  
46  
42  
A
A
A
G = Gate, C = Collector, E = Emitter  
c
either emitter terminal can be used as  
Main or Kelvin Emitter  
ICM  
TC = 25°C, 1ms  
320  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
41  
A
800  
mJ  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 2Ω  
ICM = 164  
A
Features  
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
z
Optimized for Low Switching Losses  
Square RBSOA  
Isolation Voltage 2500V~  
Anti-Parallel Ultra Fast Diode  
Positive Thermal Coefficient of  
Vce(sat)  
Avalanche Rated  
High Current Handling Capability  
PC  
TC = 25°C  
500  
W
z
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z
z
-55 ... +150  
z
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
z
z
International Standard Package  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
Weight  
30  
g
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
5.0  
z
z
50 μA  
3 mA  
z
TJ = 125°C  
TJ = 125°C  
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
z
VCE(sat)  
IC = 82A, VGE = 15V, Note 1  
2.75  
3.50  
3.20  
V
V
z
Lamp Ballasts  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100352D(03/13)  

与IXYN82N120C3H1相关器件

型号 品牌 获取价格 描述 数据表
IXYP10N65B3D1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP10N65C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP10N65C3D1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP10N65C3D1M LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP15N65C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP15N65C3D1 IXYS

获取价格

Preliminary Technical Information
IXYP15N65C3D1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP15N65C3D1M LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP20N120C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP20N65B3 IXYS

获取价格

Advance Technical Information